GE Power Services Ships First F-class Extended-Life Rotors
نویسندگان
چکیده
منابع مشابه
High Efficiency Class-F Power Amplifier Design
Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amp...
متن کاملDesign of a Class F Power Amplifier
A Class F power amplifier (PA) at 2.5GHz has been designed and fabricated. Test results show 15.7 dB gain with 75.75% power added efficiency (PAE ), at an input level of 25 dBm. The design procedure is presented, with various issues illustrated and addressed. A new method is proposed to obtain the optimum load and source impedances without iterations, which would usually be necessary.
متن کاملHighly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology
In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7–2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (...
متن کاملPower: A First-Class Architectural Design Constraint
L imiting power consumption presents a critical issue in computing, particularly in portable and mobile platforms such as laptop computers and cell phones. Limiting power in other computer settings—such as server farms—warehouse-sized buildings filled with Internet service providers' servers—is also important. A recent analysis by Deo Singh and Vivek Tawair of Intel showed that a 25,000-square-...
متن کاملMMIC class-F power amplifiers using field-plated GaN HEMTs
Abstract: Class-F microwave monolithic integrated circuit (MMIC) power amplifiers (PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0GHz achieved a power-added efficiency (PAE) of 50% with 38dBm output power and 6.2W/mm power density. A second class-F PA operating a...
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ژورنال
عنوان ژورنال: Mechanical Engineering
سال: 2016
ISSN: 0025-6501,1943-5649
DOI: 10.1115/1.2016-may-4